Matsuura, Hideharu: шукати на сайті Z-Library

Рік:

2020

Файл:

PDF, 207 KB

2020

Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region

Matsuura, Hideharu, Nishihata, Rinya, Takeshita, Akinobu, Ogawa, Kohei, Imamura, Tatsuya, Takano, Kota, Okuda, Kazuya, Hidaka, Atsuki, Ji, Shi Yang, Eto, Kazuma, Kojima, Kazutoshi, Kato, Tomohisa, Yos

Журнал:

Hideharu Matsuura, Kazuhide Sonoi

Рік:

2020

Файл:

PDF, 378 KB

2020

A method for evaluating the densities and energy levels of impurities in semiconductors from the temperature dependence of majority-carrier concentration

Журнал:

Electronics and Communications in Japan (Part II: Electronics))

Рік:

1997

Файл:

PDF, 612 KB

1997

A graphical peak analysis method for characterizing impurities in SiC, GaN and diamond from temperature-dependent majority-carrier concentration

Hideharu Matsuura

Журнал:

Journal of Materials Science: Materials in Electronics

Рік:

2008

Мова:

english

Файл:

PDF, 549 KB

english, 2008

Characterization of deep centers in semi-insulating SiC and HgI2: Application of discharge current transient spectroscopy

Hideharu Matsuura, Miyuki Takahashi, Shunji Nagata, Kazuo Taniguchi

Журнал:

Journal of Materials Science: Materials in Electronics

Рік:

2008

Мова:

english

Файл:

PDF, 409 KB

english, 2008

Removal of Carbon Contamination on Si Wafers with an Excimer Lamp

MAYUMI TODE, YASUO TAKIGAWA, TAIZO IGUCHI, HIDEHARU MATSUURA, MASATO OHMUKAI, WATARU SASAKI

Журнал:

Metallurgical and Materials Transactions A

Рік:

2007

Мова:

english

Файл:

PDF, 198 KB

english, 2007

Parameters required to simulate electric characteristics of SiC devices for n-type 4H–SiC

Kagamihara, Sou, Matsuura, Hideharu, Hatakeyama, Tetsuo, Watanabe, Takatoshi, Kushibe, Mitsuhiro, Shinohe, Takashi, Arai, Kazuo

Журнал:

Рік:

2004

Мова:

english

Файл:

PDF, 332 KB

english, 2004

Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H-SiC epilayers

Matsuura, Hideharu, Komeda, Masahiko, Kagamihara, Sou, Iwata, Hirofumi, Ishihara, Ryohei, Hatakeyama, Tetsuo, Watanabe, Takatoshi, Kojima, Kazutoshi, Shinohe, Takashi, Arai, Kazuo

Журнал:

Рік:

2004

Мова:

english

Файл:

PDF, 407 KB

english, 2004

Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC

Matsuura, Hideharu, Takeshita, Akinobu, Imamura, Tatsuya, Takano, Kota, Okuda, Kazuya, Hidaka, Atsuki, Ji, Shi Yang, Eto, Kazuma, Kojima, Kazutoshi, Kato, Tomohisa, Yoshida, Sadafumi, Okumura, Hajime

Журнал:

Рік:

2018

Мова:

english

Файл:

PDF, 363 KB

english, 2018

Dependence of conduction mechanisms in heavily Al-doped 4H-SiC epilayers on Al concentration

Matsuura, Hideharu, Takeshita, Akinobu, Imamura, Tatsuya, Takano, Kota, Okuda, Kazuya, Hidaka, Atsuki, Ji, Shiyang, Eto, Kazuma, Kojima, Kazutoshi, Kato, Tomohisa, Yoshida, Sadafumi, Okumura, Hajime

Журнал:

Applied Physics Express

Рік:

2018

Мова:

english

Файл:

PDF, 1007 KB

english, 2018

Involvement of Elf3 on Smad3 activation-dependent injuries in podocytes and excretion of urinary exosome in diabetic nephropathy

Sakurai, Akiko, Ono, Hiroyuki, Ochi, Arisa, Matsuura, Motokazu, Yoshimoto, Sakiya, Kishi, Seiji, Murakami, Taichi, Tominaga, Tatsuya, Nagai, Kojiro, Abe, Hideharu, Doi, Toshio, Sen, Utpal

Журнал:

PLoS ONE

Рік:

2019

Мова:

english

Файл:

PDF, 2.25 MB

english, 2019

Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers

Matsuura, Hideharu, Nishihata, Rinya, Takeshita, Akinobu, Imamura, Tatsuya, Takano, Kota, Okuda, Kazuya, Hidaka, Atsuki, Ji, Shi Yang, Eto, Kazuma, Kojima, Kazutoshi, Kato, Tomohisa, Yoshida, Sadafumi

Журнал:

Рік:

2019

Файл:

PDF, 722 KB

2019

Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC

Hidaka, Atsuki, Takeshita, Akinobu, Ogawa, Kohei, Imamura, Tatsuya, Takano, Kota, Okuda, Kazuya, Matsuura, Hideharu, Ji, Shi Yang, Eto, Kazuma, Mitani, Takeshi, Kojima, Kazutoshi, Kato, Tomohisa, Yosh

Журнал:

Nuclear Engineering and Design

Рік:

2020

Файл:

PDF, 293 KB

2020

High titers of antibodies inhibiting the binding of envelope to human cells correlate with natural resolution of chronic hepatitis C

Koji Ishii, Domenico Rosa, Yushiro Watanabe, Tohru Katayama, Hideharu Harada, Colby Wyatt, Kendo Kiyosawa, Hideki Aizaki, Yoshiharu Matsuura, Michael Houghton, Dr. Sergio Abrignani, Tatsuo Miyamura

Журнал:

Hepatology

Рік:

1998

Мова:

english

Файл:

PDF, 153 KB

english, 1998

Outline of the seismic buckling design guideline of an FBR — a tentative draft

Hiroshi Akiyama, Hideomi Ohtsubo, Hideharu Nakamura, Shinichi Matsuura, Yutaka Hagiwara, Tetsuo Yuhara, Hiroshi Hirayama, Kunio Kokubo, Yuji Ooka

Журнал:

Рік:

1993

Мова:

english

Файл:

PDF, 612 KB

english, 1993

Relationship between defects induced by irradiation and reduction of hole concentration in Al-doped 4H–SiC

Hideharu Matsuura, Sou Kagamihara, Yuji Itoh, Takeshi Ohshima, Hisayoshi Itoh

Журнал:

Physica B: Condensed Matter

Рік:

2006

Мова:

english

Файл:

PDF, 144 KB

english, 2006

Mechanisms of changes of hole concentration in Al-doped 6H-SiC by electron irradiation and annealing

Hideharu Matsuura, Hideki Yanagisawa, Kozo Nishino, Yoshiko Myojin, Takunori Nojiri, Yukei Matsuyama, Takeshi Ohshima

Журнал:

Physica B: Condensed Matter

Рік:

2009

Мова:

english

Файл:

PDF, 250 KB

english, 2009

Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation

Hideharu Matsuura, Sou Kagamihara, Yuji Itoh, Takeshi Ohshima, Hisayoshi Itoh

Журнал:

Microelectronic Engineering

Рік:

2006

Мова:

english

Файл:

PDF, 107 KB

english, 2006

A case of oral multiple primary cancer including Spindle Cell Carcinoma

Hideharu Kato, Jouji Nomura, Yoshihiko Matsumura, Shigeaki Yanase, Kaori Miyahara, Rina Matsuura, Toshiro Tagawa

Журнал:

Journal of Maxillofacial and Oral Surgery

Рік:

2010

Мова:

english

Файл:

PDF, 387 KB

english, 2010

Expression of Smad1 is directly associated with mesangial matrix expansion in rat diabetic nephropathy

Matsubara, Takeshi, Abe, Hideharu, Arai, Hidenori, Nagai, Kojiro, Mima, Akira, Kanamori, Hiroshi, Sumi, Eriko, Takahashi, Toshikazu, Matsuura, Motokazu, Iehara, Noriyuki

Журнал:

Laboratory Investigation

Рік:

2006

Мова:

english

Файл:

PDF, 363 KB

english, 2006

Angiolipoma of the cheek: A case report with a literature review

Shigeaki Yanase, Jouji Nomura, Yoshihiko Matsumura, Hideharu Kato, Takashi Takeoka, Hiroko Imura, Rina Matsuura, Ko Nakanishi, Toshiro Tagawa

Журнал:

Asian Journal of Oral and Maxillofacial Surgery

Рік:

2011

Мова:

english

Файл:

PDF, 173 KB

english, 2011

A New Therapeutic Antibody Removal Method Using Antigen-Positive Red Cells : II. Application to a P-Incompatible Pregnant Woman

Hisahiro Yoshida, Kazuhiko Ito, Nobuyuki Emi, Hideharu Kanzaki, Shunpei Matsuura

Журнал:

Vox Sanguinis

Рік:

1984

Мова:

english

Файл:

PDF, 449 KB

english, 1984

Optically and thermally induced reversible changes of midgap states in undoped a-Si:H

Hideharu Matsuura

Журнал:

Journal of Non-Crystalline Solids

Рік:

1989

Мова:

english

Файл:

PDF, 233 KB

english, 1989

Schottky barrier junctions of hydrogenated amorphous silicon-germanium alloys

Hideharu Matsuura, Hideyo Okushi, Kazunobu Tanaka

Журнал:

Journal of Non-Crystalline Solids

Рік:

1987

Мова:

english

Файл:

PDF, 176 KB

english, 1987

Biophysical Characterization of Triacyl Monosaccharide Lipid A Partial Structures in Relation to Bioactivity

Brandenburg, Klaus, Matsuura, Motohiro, Heine, Holger, Müller, Mareike, Kiso, Makato, Ishida, Hideharu, Koch, Michel H.J., Seydel, Ulrich

Журнал:

Biophysical Journal

Рік:

2002

Мова:

english

Файл:

PDF, 401 KB

english, 2002

Dark current transport mechanism of p-i-n hydrogenated amorphous silicon diodes

Matsuura, Hideharu, Matsuda, Akihisa, Okushi, Hideyo, Tanaka, Kazunobu

Журнал:

Matsuura, Hideharu, Uchida, Yoshitsugu, Nagai, Naoto, Hisamatsu, Tadashi, Aburaya, Takashi, Matsuda, Sumio

Рік:

1985

Мова:

english

Файл:

PDF, 701 KB

english, 1985

Temperature dependence of electron concentration in type-converted silicon by 1Ã10[sup 17]âcm[sup â2] fluence irradiation of 1 MeV electrons

Журнал:

Рік:

2000

Мова:

english

Файл:

PDF, 353 KB

english, 2000

Influence of excited states of a deep substitutional dopant on majority-carrier concentration in semiconductors

Clinical and Experimental Nephrology

Журнал:

Physical Review B

Рік:

2006

Мова:

english

Файл:

PDF, 140 KB

english, 2006

Polymorphism in the human matrix Gla protein gene is associated with the progression of vascular calcification in maintenance hemodialysis patients

Yoshikawa, Kazuhiro, Abe, Hideharu, Tominaga, Tatsuya, Nakamura, Masayuki, Kishi, Seiji, Matsuura, Motokazu, Nagai, Kojiro, Tsuchida, Kenji, Minakuchi, Jun, Doi, Toshio

Журнал:

Рік:

2013

Мова:

english

Файл:

PDF, 591 KB

english, 2013

Selective Expansion of the GM3 Glycolipid Monolayer Induced by Carbohydrate−Carbohydrate Interaction with Gg3 Trisaccharide-Bearing Glycoconjugate Polystyrene at the Air−Water Interface

Matsuura, Kazunori, Kitakouji, Hiromoto, Oda, Ryuichi, Morimoto, Yuki, Asano, Hiroki, Ishida, Hideharu, Kiso, Makoto, Kitajima, Ken, Kobayashi, Kazukiyo

Журнал:

Langmuir

Рік:

2002

Мова:

english

Файл:

PDF, 161 KB

english, 2002

A Quantitative Estimation of Carbohydrate-Carbohydrate Interaction Using Clustered Oligosaccharides of Glycolipid Monolayers and of Artificial Glycoconjugate Polymers by Surface Plasmon Resonance

Matsuura, Kazunori, Kitakouji, Hiromoto, Sawada, Naoki, Ishida, Hideharu, Kiso, Makoto, Kitajima, Ken, Kobayashi, Kazukiyo

Журнал:

Journal of the American Chemical Society

Рік:

2000

Мова:

english

Файл:

PDF, 78 KB

english, 2000

MPO-ANCA-Positive Anti-glomerular Basement Membrane Antibody Disease Successfully Treated by Plasma Exchange and Immunosuppressive Therapy

Murakami, Taichi, Nagai, Kojiro, Matsuura, Motokazu, Kondo, Naoki, Kishi, Seiji, Araoka, Toshikazu, Kishi, Fumi, Sakiyama, Tsutomu, Mima, Akira, Bando, Yoshimi, Abe, Hideharu, Doi, Toshio

Журнал:

Renal Failure

Рік:

2011

Мова:

english

Файл:

PDF, 836 KB

english, 2011

Expression of the Sendai Virus Fusion Protein and the Hemagglutinin-neuraminidase Protein Using a Baculovirus Vector

Sato, Toshitsugu, Taira, Hideharu, Matsuura, Yoshiharu, Iwasaki, Kentaro, Katsumata, Teizo

Журнал:

Bioscience Biotechnology and Biochemistry

Рік:

1993

Мова:

english

Файл:

PDF, 759 KB

english, 1993

Investigation of a distribution function suitable for acceptors in SiC

Журнал:

Matsuura, Hideharu, Okuno, Tetsuhiro, Okushi, Hideyo, Tanaka, Kazunobu

Рік:

2004

Мова:

english

Файл:

PDF, 342 KB

english, 2004

Electrical properties of n-amorphous/p-crystalline silicon heterojunctions

Журнал:

Рік:

1984

Мова:

english

Файл:

PDF, 735 KB

english, 1984

Thermal recovery process of the midgap-state profile of light-soaked undoped hydrogenated amorphous silicon

Журнал:

Matsuura, Hideharu, Minohara, Nobumasa, Ohshima, Takeshi

Рік:

1989

Мова:

english

Файл:

PDF, 543 KB

english, 1989

Mechanisms of unexpected reduction in hole concentration in Al-doped 4H-SiC by 200 keV electron irradiation

Журнал:

Рік:

2008

Мова:

english

Файл:

PDF, 477 KB

english, 2008

Heterogeneity of Hepatitis B Virus Genotype D in Japan

Michitaka, Kojiro, Horiike, Norio, Duong, Tran Nhu, Yagura, Michiyasu, Harada, Hideharu, Shibayama, Takao, Inui, Ayano, Fujisawa, Tomoo, Matsuura, Kana, Hiasa, Yoichi, Onji, Morikazu

Журнал:

Intervirology

Рік:

2007

Мова:

english

Файл:

PDF, 168 KB

english, 2007

A novel method for determining the gap-state profile and its application to amorphous Si1−xGexH films

Журнал:

Matsuura, Hideharu, Aso, Koichi, Kagamihara, Sou, Iwata, Hirofumi, Ishida, Takuya, Nishikawa, Kazuhiro

Рік:

1988

Мова:

english

Файл:

PDF, 1.24 MB

english, 1988

Decrease in Al acceptor density in Al-doped 4H-SiC by irradiation with 4.6 MeV electrons

Журнал:

Matsuura, Hideharu, Hase, Takashi, Sekimoto, Yasuhiro, Uchikura, Masaharu, Simizu, Masaru

Рік:

2003

Мова:

english

Файл:

PDF, 241 KB

english, 2003

Graphical peak analysis method for determining densities and emission rates of traps in dielectric film from transient discharge current

Журнал:

Matsuura, Hideharu, Matsuda, Akihisa, Okushi, Hideyo, Okuno, Tetsuhiro, Tanaka, Kazunobu

Рік:

2002

Мова:

english

Файл:

PDF, 385 KB

english, 2002

Metal-semiconductor junctions and amorphous-crystalline heterojunctions using B-doped hydrogenated amorphous silicon

Журнал:

Matsuura, Hideharu, Nagasawa, Hiroyuki, Yagi, Kuniaki, Kawahara, Takamitsu

Рік:

1984

Мова:

english

Файл:

PDF, 397 KB

english, 1984

Determination of densities and energy levels of donors in free-standing undoped 3C–SiC epilayers with thicknesses of 80 μm

Журнал:

Matsuura, Hideharu, Sugiyama, Koichi, Nishikawa, Kazuhiro, Nagata, Takashi, Fukunaga, Nobuya

Рік:

2004

Мова:

english

Файл:

PDF, 331 KB

english, 2004

Occupation probability for acceptor in Al-implanted p-type 4H–SiC

Журнал:

Рік:

2003

Мова:

english

Файл:

PDF, 358 KB

english, 2003

An Improved Method for Determining Densities and Energy Levels of Dopants and Traps by Means of Hall-Effect Measurement

Журнал:

Matsuura, Hideharu, Morita, Kouhei, Nishikawa, Kazuhiro, Mizukoshi, Takeo, Segawa, Masaharu, Susaki, Wataru

Рік:

1999

Мова:

english

Файл:

PDF, 90 KB

english, 1999

Acceptor Densities and Acceptor Levels in Undoped GaSb Determined by Free Carrier Concentration Spectroscopy

Журнал:

Matsuura, Hideharu, Morine, Tatsuya, Nagamachi, Shinji

Рік:

2002

Мова:

english

Файл:

PDF, 147 KB

english, 2002

Density and energy level of a deep-level Mg acceptor in 4H-SiC

Журнал:

Рік:

2015

Мова:

english

Файл:

PDF, 1.64 MB

english, 2015

Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiC

Matsuura, Hideharu, Sugiyama, K., Nishikawa, Kimito, Nagata, T., Fukunaga, N.

Журнал:

Nishikawa, Seiji, Okada, Ryota, Matsuura, Hideharu

Рік:

2003

Мова:

english

Файл:

PDF, 214 KB

english, 2003

Effects of Sacrifice Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy

Журнал:

Masuda, Yasuichi, Chen, Yi, Matsuura, Hideharu, Harima, Hiroshi, Nishino, Shigehiro

Рік:

2012

Мова:

english

Файл:

PDF, 346 KB

english, 2012

Electrical Properties of 3C-SiC Grown on Si by CVD Method using Si2(CH3)6

Журнал: